State retention circuit that retains data storage element state during power reduction mode

ABSTRACT

A semiconductor device that retains a state of a data storage element during a power reduction mode including supply rails and voltages, and a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled between first and second states before entering the power reduction mode. The toggling causes the storage latch to latch the state of the data storage element during the normal mode, and the retention node enables the storage element to hold the state during the power reduction mode. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention inverter keeps the retention transistor turned on and the retention transistor holds the state of the retention node during the power reduction mode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of copending, commonlyassigned and currently pending U.S. patent application Ser. No.15/963,316, filed on Apr. 26, 2018, which is herein incorporated byreference for all intents and purposes.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates in general to state retention, and moreparticularly to a state retention circuit that retains the state of adata storage element during a power reduction mode that allows reductionor elimination of always on buffers.

Description of the Related Art

Power consumption may be reduced by entering a power reduction modeduring periods of inactivity, such as a low power mode or sleep mode orthe like, in which a majority of the circuitry including synchronousdigital logic may be powered down. In many situations, however, thestate of the digital logic should be saved so that operation may beresumed without loss of information. In many configurations, storagelatches (e.g., a bubble latches) may be used to save the state ofmultiple data storage elements, such as flip flops and the like, thatcollectively define the state of the circuitry during any powerreduction mode. A retention signal routed to each storage latch ispulsed or toggled to save the state of a corresponding data storageelement prior to entering the power reduction mode. Once saved, theprimary supply voltage is de-energized to power down the circuitryincluding the data storage elements, while a retention supply voltageretains power to the storage latches during the power reduction mode.The primary supply voltage is re-energized to restore power, and a loadsignal or the like routed to each storage latch prompts restoring thestates of the data storage elements to resume normal operation.

A large circuit may include tens of thousands or more of such stateretention data storage elements, which are distributed across thesemiconductor die of the integrated circuit (IC). The retention signalmust be routed to each storage latch of each data storage element andmust hold its state during the power reduction mode. In conventionalconfigurations, an always on buffer (AOB) tree formed by branches ofinterconnected AOBs is distributed from a power mode control circuitacross the IC to each storage latch, in which each AOB is powered by theretention supply voltage (hence always powered on). In this manner, evenduring the power reduction mode, a considerable amount of leakagecurrent flows to maintain power to each AOB, thereby consuming asignificant amount of power.

SUMMARY OF THE INVENTION

A semiconductor device according to one embodiment includes supplyrails, at least one data storage element and at least one correspondingstorage latch, and at least one retention latch. The supply railsinclude a reference supply rail that develops a reference supplyvoltage, a primary supply rail that develops a primary supply voltageand a retention supply rail that develops a retention supply voltage.The primary supply rail is powered down while the retention supplyvoltage remains energized during power reduction mode. The data storageelements are powered by the positive supply voltage, and each includes acorresponding storage latch powered by the retention supply voltage.Each storage latch saves a state of a corresponding data storage elementin response to the least one retention node being toggled between firstand second states. The retention latch includes a retention transistorand retention inverter coupled to a corresponding retention node, inwhich the retention inverter is powered by the retention supply voltage.

The retention transistor is turned off and then turned back on by theretention inverter when the at least one retention node is toggledbetween the first and second states during the normal mode, in which theat least one retention latch holds the at least one retention node inthe first state during the power reduction mode. Each retention nodeenables a storage latch to hold the state of a corresponding datastorage element during the power reduction mode.

The retention transistor may be an N-type transistor coupled to thereference supply voltage or a P-type transistor coupled to the retentionsupply rail. In either case, the retention inverter prevents theretention transistor from drawing an appreciable amount of current whenthe corresponding retention node is toggled, and the retentiontransistor keeps the retention node at a stable voltage level during thepower reduction mode to that corresponding storage latches save theirstored states.

The semiconductor device may include a buffer tree including at leastone buffer powered by the primary supply voltage that toggles aretention node during the normal mode so that each storage latch storesa state of a corresponding data storage element during the powerreduction mode. The buffer tree may include multiple buffers todistributed data storage elements on the semiconductor device, and maybe controlled by a power mode circuit. The buffer tree is completelypowered down during the power reduction mode to conserve additionalpower. Multiple retention nodes and corresponding retention latches maybe provided to hold a state of a corresponding one of multiple retentionnodes during the power reduction mode.

A method of conserving power on a semiconductor device according to oneembodiment includes providing a primary supply voltage that is energizedduring a normal mode and that is de-energized during a power reductionmode, providing a retention supply rail that develops a retention supplyvoltage that remains energized during both the normal mode and the powerreduction mode, providing a data storage element powered by a primarysupply voltage, providing a storage latch powered by the retentionsupply voltage and coupled to the data storage element and to aretention node, providing a retention transistor having a first currentterminal coupled to the retention node, having a second current terminalcoupled to a selected one of the reference supply rail and the retentionsupply rail, and having a control terminal, providing a retentioninverter powered by the retention supply voltage, having an inputcoupled to the retention node and having an output coupled to thecontrol terminal of the retention transistor, and saving a state of thedata storage element by the storage latch during the normal mode bytoggling the retention node from a first state to a second state andback to the first state before entering the power reduction mode.

The method may include turning off and back on the retention transistorby the retention inverter in response to the toggling of the retentionnode between the first and second states, and holding, by the retentiontransistor, the retention node in the first state during the powerreduction mode. The retention transistor may be N-type or P-type andcoupled to hold a corresponding retention node in the first state duringthe power reduction mode.

The method may include providing a buffer tree comprising at least onebuffer powered by the primary supply voltage that is powered down duringthe power rejection mode, and toggling, by the buffer tree, theretention node before entering the power reduction mode. The buffer treemay include multiple buffers that are powered down during the powerreduction mode, and the buffer tree may be controlled by a power modecircuit.

The method may include providing multiple retention nodes, providingmultiple retention resistors each coupled to a corresponding retentionnode, and providing multiple retention inverters, each coupled to acorresponding retention transistor for holding a state of acorresponding retention node during the power reduction mode.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and is notlimited by the accompanying figures, in which like references indicatesimilar elements. Elements in the figures are illustrated for simplicityand clarity and have not necessarily been drawn to scale.

FIG. 1 is a schematic diagram of a data storage element and a storagelatch coupled to a retention latch implemented according to oneembodiment.

FIG. 2 is a timing diagram illustrating operation of the data storageelement and the storage latch of FIG. 1 while transitioning into and outof the power reduction mode.

FIG. 3 is a simplified schematic and block diagram of a semiconductordevice or integrated circuit (IC) including a state retention circuitimplemented according to one embodiment.

FIG. 4 is a schematic diagram of the retention latch of FIG. 1implemented according to one embodiment coupled to the retention node.

FIG. 5 is a schematic diagram of a state retention latch implementedaccording to an alternative embodiment for keeping a retention node highduring the power reduction mode.

FIG. 6 is a simplified block diagram of the IC of FIG. 3 including thebuffer tree routed to multiple groups of data storage elements andstorage latches distributed across the IC.

DETAILED DESCRIPTION

The inventors have recognized the need to conserve additional powerconsumption of circuitry during a power reduction mode. They havetherefore developed a retention latch powered by the retention supplyvoltage that holds a retention node into a predetermined state duringthe power reduction mode. The retention latch holds the retention nodestable to ensure that a storage latch holds the state of a correspondingdata storage element during the power reduction mode. The retentionlatch includes a relatively weak holding device coupled to the retentionnode and an inverter controlled by the retention node to further controlthe holding device. The holding device may be a pull-down or pull-updevice depending upon the normal state of the retention node. Theholding device is easily overpowered and turned off by the inverter whenthe retention node is pulled to an opposite state prompt the storagelatch to store the state of its corresponding data storage element. Theretention node is pulled back to its normal state causing the inverterto turn the holding device back on to hold the retention node in itsnormal state during the power reduction mode.

The conventional AOB tree that was used to deliver the retention signalfrom a power mode controller to each of the data storage elements of thecircuitry may be replaced by a standard buffer tree powered by theprimary supply voltage rather than the retention supply voltage. In thismanner, when the primary supply voltage is de-energized during the powerreduction mode, each buffer in the buffer tree delivering the retentionsignal is also powered down thereby saving a considerable amount ofpower during the power reduction mode as compared to the conventionalconfiguration.

FIG. 1 is a schematic diagram of a data storage element 101 and astorage latch 114 coupled to a retention latch 102 implemented accordingto one embodiment. The data storage element 101 is configured as aD-type flip-flop (DFF), where it is understood that the data storageelement 101 may alternatively be configured as any other type of datastorage unit, such as another type of flip-flop (such as for example, aset-reset (SR) flip-flop, a JK flip-flop, a T flip-flop, etc.), or anytype of data latch or the like. An input data signal D is provided tothe input of an inverter 103, having its output provided to an input ofa pass gate 104 (or transmission gate or the like) controlled by a pairof complementary clock signals CLK and CLKB. CLKB is an inverted versionof CLK, where in general a “B” appended to the end of a signal namedenotes an inverted signal unless otherwise specified. The output of thepass gate 104 is provided to an input of a keeper circuit 106, havingits output provided to an input of another pass gate 108. The pass gate108 separates the “master stage” of the data storage element 101 at theinput from the “slave stage” at the output of the data storage element101. The output of the pass gate 108 is provided to the input of anotherinverter 110, having its output coupled to a node 116 which is furthercoupled to the input of yet another inverter 112. The output of theinverter 112 asserts an output signal Q.

The storage latch 114 is provided for storing a state of the datastorage element 101 during a power reduction mode, such as a low powermode or sleep mode or the like. The illustrated storage latch 114 isconfigured as a bubble latch including a 2-input multiplexer (MUX) 118and an inverter 120, although other types of latch configurations arecontemplated. Node 116 of the data storage element 101 is coupled to alogic “1” input of the MUX 118, having an inverting output coupled tothe input of the inverter 120, and having a select input coupled to aretention node 121 for receiving a retention signal RETNF. The inverter120 has an output coupled to the logic “0” input of the MUX 118 and to alogic “0” input of another 2-input MUX 122. The MUX 122 has its logic“1” input coupled to node 116, has its inverting output coupled to aninput of another pass gate 124, and has its select input receiving aload signal LOADBF. The output of the pass gate 124 is coupled to theinput of the inverter 110.

The pass gates 104, 108, and 124 may each be configured as across-coupled pair of N-type and P-type transistors (e.g., NMOS andPMOS, respectively), although other types of configurations are knownand contemplated. The pass gates 104, 108, and 124 are each configuredto turn on (to operate in a pass mode) for one state of CLK/CLKB inwhich it passes a signal at its input to its output, and to turn off (tooperate in an isolation mode) for an opposite state of CLK/CLKB in whichit isolates its input from its output. The particular coupling ofCLK/CLKB to the pair of control terminals determines its operating mode.As shown, the pass gates 104 and 124 are each turned on for a firststate of CLK/CLKB when CLK is high, and turned off for a second state ofCLK/CLKB when CLK is low. The pass gate 108 is coupled in oppositemanner, so that it is turned on for the first state of CLK/CLKB andturned off for the second state of CLK/CLKB.

The keeper circuit 106 may be configured as a pair of back-to-backcoupled inverters I1 and I2. As shown, the input of I1 is coupled to theoutput of the pass gate 104 and to the output of the inverter I2, andthe input of I2 is coupled to the output of I1 at the output of thekeeper circuit 106. The keeper circuit 106 generally operates to latch abinary signal provided at its input to provide an inverted version ofthe binary signal at its output.

The inverters 103, I1, I2, 110, and 112 and the MUX 122 are each poweredby a primary positive supply voltage VDD relative to a reference supplyvoltage VSS. VSS is charged to any suitable negative, zero or positivevoltage level, and is usually coupled to ground (GND) have a voltage of0 Volts (V). VDD is energized during the normal operating mode, but isde-energized during the power reduction mode. VDD may be de-energized bypulling it low to VSS, or alternatively VDD may be tri-stated or placedinto a high-impedance (high-Z) state. When de-energized, most elementsor components powered by VDD are powered down drawing minimal or zerocurrent and consuming negligible power.

The inverter 120 and the MUX 118 of the storage latch 114, however, areeach powered by a positive supply voltage VDDR relative to VSS, in whichVDDR is a retention supply voltage that remains energized during boththe normal state and the power reduction mode. In this manner, the stateof the data storage element 101, after being latched into the storagelatch 114, is retained during the power reduction mode. The “state” isgenerally represented as a binary data bit or the like.

During normal operation while VDD is energized, the data storage element101 operates as a master-slave D-type flip-flop during successive clockcycles to latch and transfer the state of D to the state of Q. Also,LOADBF is kept high during the normal mode so that the MUX 122 acts asan inverter to drive its output as an inverted version of the state onnode 116. In this manner, the storage latch 114 is effectively removedfrom the circuit during the normal mode. As described further herein,RETNF is toggled high then low before entering the power reduction mode,so that the state of node 116 is latched into the storage latch 114. Thestorage latch 114 remains powered during the power reduction mode tohold the stored state. After power is restored, LOADBF is toggled lowthen back high to transfer the stored state of the storage latch 114back into the slave stage of the data storage element 101, and normaloperations may be resumed.

During the normal mode, a binary signal on D is inverted by the inverter103 and provided to the pass gate 104. When CLK is high, the pass gate104 is turned on so that the output of the inverter 103 is passed to thekeeper circuit 106, and the pass gate 108 is turned off to isolate theslave portion from the master portion. It is noted that the inverter I2is made relatively weak compared to the inverter 103, so that when thereis any contention between the inverters 103 and I2 (e.g., at oppositelogic states), the inverter 103 dominates and switches the keepercircuit 106 to the new state. For example, if the output of the inverter103 is high while the output of the inverter I2 is low when the passgate 104 is turned on, the inverter 103 overrides and pulls the input ofthe inverter I1 towards VDD, which switches the output of I2 high. It isnoted that the duration of any such contention is very short, such as onthe order of a fraction of a nanosecond (ns), thus consuming negligiblepower. Once switched, the keeper circuit 106 keeps the new state of D atits output during the current clock cycle.

In the next clock transition when CLK is high, the pass gate 104 isturned off so that the input signal D may change to a next state, andthe pass gate 108 is turned on to transfer the current state of thekeeper circuit 106 to the slave stage. The MUX 122 and the inverter 110serve as another keeper circuit while LOADBF is asserted high, in whichthe inverter I1 is made relatively strong compared to the output of theMUX 122. Thus, when there is any contention between the states of theinverter I1 and the MUX 122 during the normal mode, I1 dominates toswitch the state of the inverter 110 which further switches the state ofthe MUX 122. Again, the duration of any such contention is very shortand consumes negligible power. Once the inverter 110 and the MUX 122 areswitched, then the slave portion of the data storage element 101 holdsthe current state. Operation repeats in this manner during subsequentclock cycles.

FIG. 2 is a timing diagram illustrating operation of the data storageelement 101 and the storage latch 114 while transitioning into and outof the power reduction mode. The timing diagram plots CLK, RETN/RETNF(in which RETNF is a “final” version of RETN for the particular buffertree branch), VDD, Q, LOADB/LOADBF (in which LOADBF is a “final” versionof LOADB for the particular buffer tree branch), and VDDR versus time.At an initial time t0, VDD and VDDR are both energized high, CLK ishigh, RETN/RETNF is low, Q is shown having a state S1, and LOADB/LOADBFis high. At subsequent time t1, CLK goes low and the remaining signalsremain unchanged.

In anticipation of entering the power reduction mode (PRM), RETNF (whichis a delayed and buffered version of RETN) is toggled from its normalstate (e.g., low) to the opposite state (e.g., high) and then back toits normal state. As shown, RETNF is pulled high at a subsequent time t2and then pulled back low at time t3. While RETNF is high, the MUX 118 ofthe storage latch 114 switches to select its “1” input so that the stateof the node 116 in the slave stage of the data storage element 101 ispassed to the input of the inverter 120. When RETNF next goes back lowat time t3, the state of the node 116, which is an inverted version ofstate S1 of the data storage element 101, is latched into the storagelatch 114. It is noted that VDD remains energized while RETNF is toggledin this manner.

At subsequent time t4, VDD is de-energized in order to enter the powerreduction mode (e.g., pulled low to VSS, or tri-stated, or placed intohigh-Z state), shown having an “unknown” state. During the powerreduction mode, the inverters 103, I1, I2, 110, and 112 and the MUX 122of the data storage element 101, which are each powered by VDD, arepowered down to conserve power. The state of the data storage element101 as indicated by its Q output enters an unknown state. The storagelatch 114, however, remains powered and RETNF is held low by theretention latch 102 to retain the state of the data storage element 101during the power reduction mode. It is noted that clock circuitry mayalso be powered down so that CLK may be indeterminate or “don't care.”

When it is determined to wake up from the power reduction mode to resumenormal operations, VDD is first energized back to its normal operatingvoltage level as shown at subsequent time t5. Thus, the inverters 103,I1, I2, 110, and 112 and the MUX 122 of the data storage element 101 arere-energized to resume normal operation. The clock circuitry powers backup and CLK is initially held low at time t5. After the circuitry isre-energized by VDD, LOADBF is pulled low at time t6 and back high attime t7 while CLK is still low. In response, the MUX 122 selects its “0”input to receive the stored value of the storage latch 114, and thestored value is propagated (and inverted) through the MUX 122 and theinverters 110 and 112 to assert Q back to the state S1. It is noted thatthe D input may also be restored and passed through the pass gate 104 toset the keeper circuit 106. CLK next goes high after time t8 to resumenormal operation.

FIG. 3 is a simplified schematic and block diagram of a semiconductordevice or integrated circuit (IC) 300 including a state retentioncircuit implemented according to one embodiment. A power mode circuit302 determines the operating mode of the IC 300, including the normal orfull power operation mode and the power reduction mode. The power modecircuit 302 provides the retention signal RETN to an input of a buffertree 304, which has an output providing the RETNF signal on theretention node 121, so that RETNF is a delayed and buffered version ofRETN. The retention node 121 is coupled to a retention input RETN ofeach of a group 308 of data storage elements and storage latches,including the data storage element 101 and the storage latch 114. Theother elements of the group 308 may be configured in a similar manner asthe data storage element 101 including a storage latch similar to thestorage latch 114. The power mode circuit 302 also provides the LOADBsignal to an input of another buffer tree 310, which has an outputproviding the LOADBF signal as a delayed and buffered version of LOADB.LOADBF is provided to the LOADB input of each of the data storageelements of the group 308 including the data storage element 101.

The buffer trees 304 and 310 are both illustrated in simplified form asa set of series-coupled inverters, in which each inverter serves as abuffer to distribute one of the retention or load signals RETN and LOADBto data storage elements distributed across the IC 300. As shown in FIG.6, for example, the buffer tree 304 is routed to multiple groups 308 ofdata storage elements (DSEs) distributed across the IC 300, shown as DSEgroup 11, DSE group 12, . . . , DSE group 1N, DSE group 21, DSE group22, . . . , DSE group 2M, etc., in which N and M are integers greaterthan zero. Each group 308 includes any number, such as 1, 4, 8, 16, 32,etc., of data storage elements and corresponding storage latches. In oneembodiment, for example, the IC 300 may include thousands, tens ofthousands or even hundreds of thousands or more data storage elementsdepending upon the particular application implemented on the IC 300.Also, each buffer in each of the buffer trees 304 and 310 may includeany number of non-inverting buffers rather than just inverting buffersshown. Although not specifically shown, the buffer tree 310 may bedistributed in similar manner.

As shown in FIG. 3, each of the buffers of each of the buffer trees 304and 310 have supply terminals coupled between a VDD supply rail 312developing VDD and a VSS supply rail 314 developing VSS, so that eachbuffer is powered by VDD. In this manner, when the IC 300 is placed intothe power reduction mode by the power mode circuit 302 in which VDD isde-energized or powered down, the buffers of each of the buffer trees304 and 310 are also powered down to minimize power consumption. Priorto entering the power reduction mode, the power mode circuit 302 togglesthe RETN signal high then low in which RETN is delivered to the storagelatches for each of the data storage elements distributed on the IC 300.As previously described, RETNF is toggled high then low in response toRETN causing a storage latch within each of data storage element in thegroup 308 to store its state. Then the power mode circuit 302 instructsa power circuit (not shown) to de-energize VDD. The power mode circuit302 may remain at least partially powered, so that when it is determinedto wake up, it instructs the power circuit to re-energize VDD. Oncepowered up, the power mode circuit 302 toggles LOADB low then back high.As previously described, toggling LOADBF low and then high transfers thestored state of the storage latch within each of data storage element inthe group 308 to reload each of the data storage elements.

FIG. 4 is a schematic diagram of the retention latch 102 implementedaccording to one embodiment coupled to the retention node 121. A stateretention latch (similar to the retention latch 102) is provided for andcoupled to each retention node (similar to the retention node 121) foreach group of data storage elements (similar to the group 308). Theretention latch 102 includes an N-type transistor 402 and an inverter404. The inverter 404 is powered between the retention positive supplyvoltage VDDR and VSS and has its input coupled to the retention node 121developing RETNF. The N-type transistor includes current terminalscoupled between the retention node 121 and VSS and a control terminalcoupled to the output of the inverter 404. In one embodiment, thetransistor 402 may be configured as an N-type transistor (NMOS or NFETor the like) having its source terminal coupled to the retention node121, its drain terminal coupled to the VSS, and its gate terminalcoupled to the output of the inverter 404. In one embodiment, thetransistor 402 may be configured as a weak or “long-channel” pull downdevice pulling RETNF low to VSS when turned on.

During normal operation, RETN and thus RETNF are both pulled low to VSS.The output of the inverter 404 is pulled high turning on the transistor402 to “keep” RETNF pulled low. When RETN/RETNF is pulled high beforeentering the power reduction mode, the transistor 402, being arelatively weak device, is over-driven by the last buffer of the buffertree 304. As RETNF begins to go high, the inverter 404 begins to switchits output low which begins to turn off the transistor 402. The inverter404 then quickly switches to turn the transistor 402 fully off. In thismanner, the transistor 402 is switched off very quickly consuming anegligible amount of power, and each of the storage latches (e.g.,storage latch 114) of the data storage elements of the group 308 storethe state of their respective data storage element (e.g., data storageelement 101). When RETN/RETNF is pulled back low, the inverter 404switches its output high to turn the transistor 402 back on. In thismanner, the retention node 121 is held low during the power reductionmode without having to keep the buffers of the buffer tree 304 poweredon, and the states of the data storage elements of the IC 300 are saved.

FIG. 5 is a schematic diagram of a state retention latch 502 implementedaccording to an alternative embodiment for keeping a retention node 521high during the power reduction mode. A data storage element 501 may beconfigured in a similar manner as the data storage element 101, such asa flip-flop or a latch or the like, and is powered by VDD which isenergized during the normal mode and de-energized during the powerreduction mode as previously described. A storage latch 514, powered bythe retention supply voltage VDDR, is coupled to the data storageelement 501 for storing its state during the power reduction mode. Thestorage latch 514 may be configured in substantially similar manner asthe storage latch 114, except that it has an inverted retention inputcoupled to a retention node 521 that develops a retention signal RETNP.RETNP is a delayed and buffered version of RETN provided by the buffertree 304 in a similar manner as RETNF, except that RETNP is normallypulled high to VDD rather than normally pulled low to VSS. As shown inFIG. 3, the buffer tree 304 may have multiple inverting buffers so thatany number of nodes therein are toggled to opposite states of RETN. Inthis manner as shown, when RETN is toggled high and then back low, RETNPis toggled low and then back high causing the storage latch 514 to storethe state of the data storage element 501.

In this case, a P-type transistor 503 has its drain terminal coupled tothe retention node 521 and its source terminal coupled to VDDR. Aninverter 504 powered by VDDR has its input coupled to the retention node521 and its output coupled to the gate terminal of the transistor 503.During normal operation while RETNP is high, the inverter 504 pulls thegate terminal of the transistor 503 low turning it on to keep RETNPpulled high. When RETNP is toggled low to cause the storage latch 514 tolatch the current state of the data storage element 501, the buffer tree304 briefly overpowers the transistor 503 and the inverter 504 togglesits output high to quickly turn the transistor fully off. In a similarmanner as described above for the transistor 402, the transistor 503 isswitched off very quickly consuming a negligible amount of power. Whenthe buffer tree 304 pulls RETNP back high, the inverter 504 turns on thetransistor 503. When VDD is de-energized powering down the buffer tree304, the inverter 504 remains powered to drive the transistor 503 tokeep the retention node 521 pulled high. In this manner, the storagelatch 514 retains the stored state of the data storage element 501during the power reduction mode.

The present description has been presented to enable one of ordinaryskill in the art to make and use the present invention as providedwithin the context of particular applications and correspondingrequirements. The present invention is not intended, however, to belimited to the particular embodiments shown and described herein, but isto be accorded the widest scope consistent with the principles and novelfeatures herein disclosed. Many other versions and variations arepossible and contemplated. Those skilled in the art should appreciatethat they can readily use the disclosed conception and specificembodiments as a basis for designing or modifying other structures forproviding the same purposes of the present invention without departingfrom the spirit and scope of the invention.

1. A semiconductor device, comprising: a reference supply rail thatdevelops a reference supply voltage, a primary supply rail that developsa primary supply voltage relative to the reference supply voltage duringa normal mode and that is de-energized during a power reduction mode,and a retention supply rail that develops a retention supply voltagerelative to the reference supply voltage that remains energized duringthe power reduction mode; at least one data storage element powered bythe positive supply voltage, each including a corresponding one of atleast one storage latch powered by the retention supply voltage andcoupled to at least one retention node for saving a state of acorresponding one of the at least one data storage element in responseto the at least one retention node toggled from a first state to asecond state and back to the first state during the normal mode; and atleast one retention latch, each comprising: a retention transistorhaving a first current terminal coupled to the at least one retentionnode, having a second current terminal coupled to a selected one of thereference supply rail and the retention supply rail, and having acontrol terminal; and a retention inverter powered by the retentionsupply voltage, having an input coupled to the first current terminal ofthe retention transistor and having an output coupled to the controlterminal of the retention transistor.
 2. The semiconductor device ofclaim 1, wherein the retention transistor is turned off and then turnedback on by the retention inverter when the at least one retention nodeis toggled between the first and second states during the normal mode,and wherein the at least one retention latch holds the at least oneretention node in the first state during the power reduction mode. 3.The semiconductor device of claim 1, wherein the retention transistor isturned on by the retention inverter during the normal mode to pull theat least one retention node towards the reference supply voltage,wherein the retention transistor is turned off by the retention inverterwhen the at least one retention node is pulled high, and is turned backon by the retention inverter when the at least one retention node ispulled back low to pull the at least one retention node towards thereference supply voltage during the power reduction mode.
 4. Thesemiconductor device of claim 3, wherein the retention transistorcomprises an N-type transistor having a drain terminal coupled to the atleast one retention node, having a source terminal coupled to thereference supply rail, and having a gate terminal coupled to the outputof the retention inverter.
 5. The semiconductor device of claim 1,wherein the retention transistor is turned on by the retention inverterduring the normal mode to pull the at least one retention node towardsthe retention supply voltage, wherein the retention transistor is turnedoff by the retention inverter when the at least one retention node ispulled low, and is turned back on by the retention inverter when the atleast one retention node is pulled back high to pull the at least oneretention node towards the retention supply voltage during the powerreduction mode.
 6. The semiconductor device of claim 5, wherein theretention transistor comprises a P-type transistor having a drainterminal coupled to the at least one retention node, having a sourceterminal coupled to the retention supply rail, and having a gateterminal coupled to the output of the retention inverter.
 7. Thesemiconductor device of claim 1, further comprising a buffer treecomprising at least one buffer powered by the primary supply voltagethat is powered down during the power reduction mode, wherein the buffertree toggles the at least one retention node before entering the powerreduction mode.
 8. The semiconductor device of claim 7, wherein thebuffer tree comprises a plurality of buffers that are powered by theprimary supply voltage and that are powered down during the powerreduction mode.
 9. The semiconductor device of claim 7, furthercomprising a power mode circuit that controls the buffer tree.
 10. Thesemiconductor device of claim 1, wherein the at least one retention nodecomprises a plurality of retention nodes, and wherein the at least oneretention latch comprises a plurality of retention latches each coupledto hold a state of a corresponding one of the plurality of retentionnodes during the power reduction mode.
 11. A method of conserving poweron a semiconductor device, comprising: providing a reference supply railthat develops a reference supply voltage; providing primary supplyvoltage that develops a primary supply voltage relative to the referencesupply voltage during a normal mode; de-energizing the primary supplyvoltage during a power reduction mode; providing a retention supply railthat develops a retention supply voltage relative to the referencesupply voltage during both the normal mode and the power reduction mode;providing a data storage element powered by the primary supply voltage,and providing a storage latch powered by the retention supply voltagewhich is coupled to the data storage element and to a retention node;providing a retention transistor having a first current terminal coupledto the retention node, having a second current terminal coupled to aselected one of the reference supply rail and the retention supply rail,and having a control terminal; providing a retention inverter powered bythe retention supply voltage, having an input coupled to the retentionnode and having an output coupled to the control terminal of theretention transistor; and saving a state of the data storage element bythe storage latch during the normal mode by toggling the retention nodefrom a first state to a second state and back to the first state beforeentering the power reduction mode.
 12. The method of claim 11, furthercomprising: turning off and back on the retention transistor by theretention inverter in response to the toggling of the retention nodebetween the first and second states; and holding, by the retentiontransistor, the retention node in the first state during the powerreduction mode.
 13. The method of claim 11, further comprising: turningon the retention transistor by the retention inverter during the normalmode to pull the at least one retention node towards the referencesupply voltage; turning off the retention transistor by the retentioninverter when the retention node is pulled high; and turning theretention transistor back on by the retention inverter when the at leastone retention node is pulled back low to pull the retention node towardsthe reference supply voltage during the power reduction mode.
 14. Themethod of claim 13, wherein the providing a retention transistorcomprises providing an N-type transistor having a drain terminal coupledto the retention node, having a source terminal coupled to the referencesupply rail, and having a control terminal coupled to the output of theretention inverter.
 15. The method of claim 11, further comprising:turning on the retention transistor by the retention inverter during thenormal mode to pull the at least one retention node towards thereference supply voltage; turning off the retention transistor by theretention inverter when the retention node is pulled low; and turningthe retention transistor back on by the retention inverter when the atleast one retention node is pulled back high to pull the retention nodetowards the retention supply voltage during the power reduction mode.16. The method of claim 15, wherein the providing a retention transistorcomprises providing a P-type transistor having a drain terminal coupledto the retention node, having a source terminal coupled to the retentionsupply rail, and having a control terminal coupled to the output of theretention inverter.
 17. The method of claim 11, further comprising:providing a buffer tree comprising at least one buffer powered by theprimary supply voltage that is powered down during the power rejectionmode; and wherein the toggling the retention node comprises the buffertree toggling the retention node before entering the power reductionmode.
 18. The method of claim 17, wherein the providing a buffer treecomprises providing a plurality of buffers that are powered by theprimary supply voltage that are powered down during the power reductionmode.
 19. The method of claim 17, further comprising providing a powermode circuit that controls the buffer tree.
 20. The method of claim 11,comprising: providing a plurality of retention nodes; the providing aretention transistor comprising providing a plurality of retentionresistors each coupled to a corresponding one of the plurality ofretention nodes; and the providing a retention inverter comprisingproviding a plurality of retention inverters, each coupled to acorresponding one of the plurality of retention transistors for holdinga state of a corresponding one of the plurality of retention nodesduring the power reduction mode.